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Investigation of electron impact double excitation of the

Current-Transport Mechanisms in the AlInN/AlN/GaN single

in pseudomorphic AlInN/AlN/GaN SC and AlInN/AlN/GaN/AlN/GaN DC heterostructures were calculated by solving one-dimensional nonlinear Schrödinger–Poisson equations, self-consistently including polar...

Analysis of tympanosclerotic plaques via atomic force microscope

Phase Diagrams of a Modified XY Model

versus the electron temperature of the AlInN/AlN/GaN heterostructure at 80 K lattice temperature is plotted in Fig. 6. Theoretical power loss rates that do not include the hot-phonon effects are al...

Influence of boron-interstitials clusters on hole mobility

carrier density without doping and low sheet resistance, make the lattice matched AlInN/AlN/GaN structures ideal for the realization of a heterostructure field effect transistor [8-10]. However, fr...

quaternary alloys

Logic Synthesis for Networks of Four-terminal Switches

An Efficient Plugin for Representing Heterogeneous Translucent